Impact of ion energy on single-event upset
WitrynaImpact ionization is an efficient method to generate electron–hole pairs [1,3]. In N-channel MOSFET, the electrons are collected at the drain and the holes are retained in the body by a negative back-gate voltage. Writing “1” is fast but requires a high drain voltage () and consumes power. The parasitic bipolar transistor (PBT) is ... Witryna8 lut 2024 · The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change.
Impact of ion energy on single-event upset
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Witryna1 kwi 2007 · A new form of microscopy has been developed which produces micron- resolution maps of where single event upsets occur during ion irradiation of integrated circuits. utilizing a nuclear microprobe, this imaging technique can irradiate, in isolation, the lowest functional units of an integrated circuit (e.g. transistor drains, gates, … Witryna1 maj 2024 · Impact of ion energy on single-event upset. ... The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM. IEEE Trans. Nucl. Sci., 52 (2005), pp. 2125-2131, 10.1109/TNS.2005.860677. View Record in Scopus Google Scholar
Witryna1 maj 2024 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ... Witryna5 lip 2024 · Abstract: The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a …
Witryna1 maj 2024 · Traditionally, the linear energy transfer (LET) is considered as the only important factor influencing the sensitivity of the single-event effect (SEE) in semiconductor devices [1]. However, studies in recent years indicated that except for LET, the incident heavy ions energy and species will also impact SEE's measured … Witryna1 maj 2024 · The single event upset effect refers to the effect th at high-energy particles impact the storage circuit . ... When the heavy ion upset threshold is reached, the n0 node will upset from "1" to "0
Witryna1 cze 2013 · The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored.
Witryna1 lip 2007 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed … dermanor chiclayoWitrynaprovide a variety of ions over arange of energies for testing. Each device under test (DUT) was irradiated with heavy ions having linear energy transfer (LET) ranging from 0.07 to 80 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 5 particles/cm 2 /s, depending on device sensitivity. Representative ions used are listed in Tables I, II … derma needling for hair lossWitryna11 gru 2007 · The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and … derma needling facialWitrynaWhen an impact between an ion and an electron, assumed initially at rest, is frontal, the energy transferred to the electron is maximum and equal to 2 v 2, and the maximum fractional energy loss is given by Δ E / E = 4 / M where E, v, and M are the projectile incident energy, speed, and mass, respectively. In addition, the scattering of one ... derman antifungal spray solutionWitryna19 mar 2024 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ... dermanew microdermabrasion cremeWitryna12 gru 2007 · Abstract: The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and … der mann der sherlock holmes war streamWitrynaEstimating the rate of SEU events requires the following information: 1. The critical charge: how much charge must be injected into a node to trigger regenerative action. 2. The device geometry: the area of the sensitive node and the available path length for an ionizing particle to deposit its energy. 3. der mann der sherlock holmes war wikipedia